한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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- Pages.9-10
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- 2005
선택적 단결정 실리콘 성장의 반도체 소자 적용
SEG Applications for Semiconductor Devices
- 정우석 (한국전자통신연구원 기반기술연구소)
- Cheong, Woo-Seok (Electronics and Telecommunications Research Institute)
- 발행 : 2005.07.07
초록
Process diagrams of selective epitaxial growth of silicon(SEG) could be developed from CVD thermodynamics. They could not only be helpful with understanding of the mechanism, but also offer good processing guidelines in manufacturing high density devices. Through the process optimization skill, applications of SEG to high-density device structures could be possible without problems such as loading effect and facet generation, with producing outstanding electronic properties.