Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.07a
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- Pages.5-6
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- 2005
Low-Frequency Noise Characteristics of SiGe pMOSFET Depending upon Channel Structures and Bias Conditions
SiGe pMOSFET의 채널구조와 바이어스 조건에 따른 잡음 특성
- Choi, Sang-Sik (Chonbuk Univ.) ;
- Yang, Hun-Duk (Chonbuk Univ.) ;
- Kim, Sang-Hoon (ETRI) ;
- Song, Young-Joo (ETRI) ;
- Cho, Kyoung-Ik (ETRI) ;
- Kim, Jeonng-Huoon (GIST) ;
- Song, Jong-In (GIST) ;
- Shim, Kyu-Hwan (Chonbuk Univ.)
- 최상식 (전북대학교) ;
- 양현덕 (전북대학교) ;
- 김상훈 (한국전자통신연구원) ;
- 송영주 (한국전자통신연구원) ;
- 조경익 (한국전자통신연구원) ;
- 김정훈 (광주과학기술원) ;
- 송종인 (광주과학기술원) ;
- 심규환 (전북대학교)
- Published : 2005.07.07
Abstract
High performance SiGe heterostructure metal-oxide-semiconductor field effect transistors(MOSFETs) were fabricated using well-controlled delta-doping of boron and SiGe/Si heterostructure epitaxal layers grown by reduced pressure chemical vapor deposition. In this paper, we report 1/f noise characteristics of the SiGe MOSFETs measured under various bias conditions of the gate and drain voltages changing in linear operation regions. From the noise spectral density, we found that the gate and drain voltage dependence of the noise represented same features, as usually scaled with