Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.11a
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- Pages.80-81
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- 2005
A study on characteristics of crystallization according to changes of top structure with phase change memory cell of $Ge_2Sb_2Te_5$
$Ge_2Sb_2Te_5$ 상변화 소자의 상부구조 변화에 따른 결정화 특성 연구
- Lee, Jae-Min (Department of Electronic Materials Engineering, Kwangwoon Univ.) ;
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Shin, Kyung
(Department of Electronic Materials Engineering, Kwangwoon Univ.) ;
- Choi, Hyuck (Department of Electronic Materials Engineering, Kwangwoon Univ.) ;
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Chung, Hong-Bay
(Department of Electronic Materials Engineering, Kwangwoon Univ.)
- Published : 2005.11.10
Abstract
Chalcogenide phase change memory has high performance to be next generation memory, because it is a nonvolatile memory processing high programming speed, low programming voltage, high sensing margin, low consumption and long cycle duration. We have developed a sample of PRAM with thermal protected layer. We have investigated the phase transition behaviors in function of process factor including thermal protect layer. As a result, we have observed that set voltage and duration of protect layer are more improved than no protect layer.