The Effects of Deposition Temperature on the Growth Behavior of the $BNdT(Bi_{3.25}Nd_{0.75}Ti_{3}O_{12})$ Ferroelectric Thin Films

$BNdT(Bi_{3.25}Nd_{0.75}Ti_{3}O_{12})$ 강유전 박막 성장거동에 미치는 증착온도의 영향

Ferroelectric $Bi_{3.25}Nd_{0.75}Ti_{3}O_{12}(BNdT)$ thin films were proposed for capacitor of FeRAM. The BNdT thin films were grown on Pt/Ti $SiO_2/P-Si(100)$ substrates by the RF magnetron sputtering deposition. The dielectric properties of the BNdT were investigated by varying deposition temperatures. Increasing deposition temperature, the (117) peak was increased. An increase of columnar and recrystalline structure of BNdT films with increasing deposition temperature was observed by the Field Emission Scanning Electron Microscopy(FE-SEM). The dielectric constant and dielectric loss of the BNdT thin films with deposition temperature of $600^{\circ}C$ were 319 and 0.05, respectively.