Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Fabrication of phosphorus doped ZnO thin film using multi-layer structure

다층 구조를 이용한 Phosphorus 도핑된 ZnO 박막 제작

  • Kang, Hong-Seong (Dept. of Electrical and Electronic Engineering, Yonsei University) ;
  • Lim, Sung-Hoon (Dept. of Electrical and Electronic Engineering, Yonsei University) ;
  • Chang, Hyun-Woo (Dept. of Electrical and Electronic Engineering, Yonsei University) ;
  • Kim, Gun-Hee (Dept. of Electrical and Electronic Engineering, Yonsei University) ;
  • Kim, Jong-Hoon (Dept. of Electrical and Electronic Engineering, Yonsei University) ;
  • Lee, Sang-Yeol (Dept. of Electrical and Electronic Engineering, Yonsei University)
  • Published : 2005.11.04
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Abstract

ZnO and phosphorus doped ZnO thin films (ZnO:P) are deposited by pulsed laser deposition grown on (001) $Al_{2}O_{3}$. ZnO/ZnO:P/ZnO/$Al_{2}O_{3}$ (multi-layer) structure was used for phosphorus doped ZnO fabrication. This multi-layer structure thin film was annealed at $400^{\circ}C$ for 40 min. The electron concentration of that was changed from $10^{19}$ to $10^{16}/cm^{-3}$ after annealing. ZnO thin films with encapsulated structure showed the enhanced structural and optical properties than phosphorus doped ZnO without encapsulated layer. In this study, encapsulated ZnO structure was suggested to enhance electrical, structural and optical properties of phosphorus doped ZnO thin film and it was identified that encapsulated structure could be used to fabricate high quality phosphorus doped ZnO thin film.

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