III-V 족 MOCVD 공정의 열전달 및 필름 성장에 대한 연구

A Study on the Heat Transfer and Film Growth During the III-V MOCVD Processes

Film growth rate of InP and GaAs using TMI, TMG, TBA and TBP is numerically predicted and compared to the experimental results. Obtained results show that the film growth rate is very sensitive to the thermal condition in the reactor. To obtain exact thermal boundary conditions at the reactor walls, we analyzed the gas flow and heat transfer in the reactor including outer tube as well as the inner reactor parts using a full three-dimensional model. The results indicate that the exact thermal boundary conditions are important to get precise film growth rate prediction.