Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2004.04b
- /
- Pages.121-124
- /
- 2004
Fabrication of Porous Silicon Using Electrochemical Etching
전기화학적 식각을 이용한 다공성 실리콘 제조
- Jin, Dong-Woo (DongSeo Uni.) ;
-
No, Sang-Soo
(Technical Research Institute, Daeyang Electric Co., LTD)
;
-
Kim, Gue-Hyun
(DongSeo Uni.)
;
-
Chung, Gwiy-Sang
(DongSeo Uni.)
- Published : 2004.04.24
Abstract
The research on the porous silicon having low wafer stress during the oxidation process in IPOS(Isolation by Porous Oxidized Silicon) were carried out. Fine pores with less than 100A of diameter were found in the porous silicon which from p-type Si by electrochemical etching. In this study, it is possible to make the porous silicon with 59% of porosity.