Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2004.04b
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- Pages.85-88
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- 2004
Cost down thin film silicon substrate for layer transfer formation study
저가격 박막 실리콘 기판을 위한 단결정 실리콘 웨이퍼에 layer transfer 형성 연구
- Kwon, Jae-Hong (Strategic Research Energy Center, Dept. of Electronics Engineering, Sejong University) ;
- Kim, Dong-Seop (Strategic Research Energy Center, Dept. of Electronics Engineering, Sejong University) ;
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Lee, Soo-Hong
(Strategic Research Energy Center, Dept. of Electronics Engineering, Sejong University)
- Published : 2004.04.24
Abstract
Mono-crystalline silicon(mono-Si) is both abundant in our environment and an excellent material for Si device applications. However, single crystalline silicon solar cell has been considered to be expensive for terrestrial applications. For that reason, the last few years have seen very rapid progress in the research and development activities of layer transfer(LT) processes. Thin film Si layers which can be detached from a reusable mono-Si wafers served as a substrate for epitaxial growth. The epitaxial films have a very high efficiency potential. LT technology is a promising approach to reduce fabrication cost with high efficiency at large scale since expensive Si substrate can be recycled. Low quality Si can be used as a substrate. Therefore, we propose one of the major technologies on fabricating thin film Si substrate using a LT. In this paper, we study the LT method using the electrochemical etching(ECE) and solid edge.