• 한국정밀공학회지
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• 제30권6호
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• pp.638-643
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• 2013

Laser beam machining (LBM) is fast, contactless and able to machine various materials. So it is used to cut metal, drill holes, weld or pattern the imprinted surface. However, after LBM, there still leave burrs and recast layers around the machined area. In order to remove these unwanted parts, LBM process often uses electrochemical etching (ECE). But, the total thickness of workpiece is reduced because the etching process removes not only burrs and recast layers, but also the entire surface. In this paper, surface coating was performed using enamel after LBM on metal. The recast layer can be selectively removed without decreasing total thickness. Comparing with LBM process only, the surface quality of enamel coating process was better than that. And edge shape was also maintained after ECE.

• 한국정밀공학회지
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• 제29권10호
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• pp.1089-1095
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• 2012

Laser beam machining (LBM) using nanosecond pulsed laser is widely known to be rapid and non-wear process for micromachining. However, the quality itself cannot meet the precision standard due to the recast layer and heat affected zone. In this paper, a fabrication method for machining micro features in stainless steel using a hybrid process of LBM using nanosecond pulsed laser and electrochemical etching (ECE) is reported. ECE uses non-contacting method for precise surface machining and selectively removes the recast layer and heat affected zone produced by laser beam in an effective way. Compared to the single LBM process, the hybrid process of LBM and ECE enhanced the quality of the micro features.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.85-88
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• 2004

Mono-crystalline silicon(mono-Si) is both abundant in our environment and an excellent material for Si device applications. However, single crystalline silicon solar cell has been considered to be expensive for terrestrial applications. For that reason, the last few years have seen very rapid progress in the research and development activities of layer transfer(LT) processes. Thin film Si layers which can be detached from a reusable mono-Si wafers served as a substrate for epitaxial growth. The epitaxial films have a very high efficiency potential. LT technology is a promising approach to reduce fabrication cost with high efficiency at large scale since expensive Si substrate can be recycled. Low quality Si can be used as a substrate. Therefore, we propose one of the major technologies on fabricating thin film Si substrate using a LT. In this paper, we study the LT method using the electrochemical etching(ECE) and solid edge.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.146-149
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• 2004

Porous silicon(PS) as an excellent light diffuser can be used as an antireflection layer without other antireflection coating(ARC) materials. PS layers were obtained by electrochemical etching(ECE) anodization of silicon wafers in hydrofluoric acid/ethanol/de-ionized(DI) water solution($HF/EtOH/H_2O$). This technique is based on the selective removal of Si atoms from the sample surface forming a layer of PS with adjustable optical, electrical, and mechanical properties. A PS layer with optimal ARC characteristics was obtained in charge density (Q) of 5.2 $C/cm^2$. The weighted reflectance is reduced from 33 % to 4 % in the wavelength between 400 and 1000 nm. The weighted reflectance with optimized PS layers is much less than that obtained with a commercial SiNx ARC on a potassium hydroxide(KOH) pre-textured multi-crystalline silicon(mc-Si) surface.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.1277-1280
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• 2005

A high-aspect-ratio and high-resolution stainless steel shadow mask for organic thin-film transistors (OTFTs) circuit has been fabricated by a new method which combines photochemical machining, micro-electrical discharge machining (micro-EDM), and electrochemical etching (ECE). First, connection lines and source-drain holes are roughly machined by photochemical etching, and then the part of source and drain holes is finished by the combination of micro-EDM and ECE processes. Using this method a $100\;\mu{m}$ thick stainless steel (AISI 304) shadow mask for inverter can be fabricated with the channel length of $30\;\mu{m}\;and\;10\;\mu{m}\;respectively.\;The\;width\;of\;connection line\;is\;150\;\mu{m}$. The aspect ratio of the wall is about 5 and 15, respectively. Metal lines and source-drain electrodes of OTFTs were successfully deposited through the fabricated shadow mask.