한국정보디스플레이학회:학술대회논문집
- 2004.08a
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- Pages.401-404
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- 2004
Transfer Characteristics of Poly-Si TFTs with Laser Energy Change
- You, Jae-Sung (LG.Philips LCD R&D Center) ;
- Kim, Young-Joo (LG.Philips LCD R&D Center) ;
- Jung, Yun-Ho (LG.Philips LCD R&D Center) ;
- Seo, Hyun-Sik (LG.Philips LCD R&D Center) ;
- Kang, Ho-Chul (LG.Philips LCD R&D Center) ;
- Lim, Kyong-Moon (LG.Philips LCD R&D Center) ;
- Kim, Chang-Dong (LG.Philips LCD R&D Center)
- Published : 2004.08.23
Abstract
Transfer characteristics of poly-Si TFTs within process window of laser energy are investigated. In terms of surface morphology and transfer characteristics, process window of laser crystallization is evaluated. While maximum mobility exists in lower edge of process window in n-channel TFTs, maximum mobility exists in higher edge of process window in p-channel TFTs.
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