한국정보디스플레이학회:학술대회논문집
- 2004.08a
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- Pages.309-314
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- 2004
Device Physics of Low Temperature Poly-Si and Single Grain TFTs
- Migliorato, P. (Cambridge University Engineering Department) ;
- Yan, F. (Cambridge University Engineering Department) ;
- Mo, Y. (Cambridge University Engineering Department) ;
- Hong, Y. (Cambridge University Engineering Department) ;
- Ishihara, R. (Delft University of Technology)
- Published : 2004.08.23
Abstract
Static and transient behaviour of Low Temperature Poly-Si TFTs (LTPS-TFTs) and Single Grain TFTs (SG- TFTs) are compared 3-D simulation is applied here for the first time to TFTs to account for the structure and twin boundaries in SG-TFTs.
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