Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- summer
- /
- Pages.343-347
- /
- 2004
Measurement of Interface Trapped Charge Densities $(D_{it})$ in 6H-SiC MOS Capacitors
- Lee Jang Hee (School of Elecronic and Computer Engineering, Chungbuk National University) ;
- Na Keeyeol (School of Elecronic and Computer Engineering, Chungbuk National University) ;
- Kim Kwang-Ho (Dept of Semiconductor Engineering, Chongju University) ;
- Lee Hyung Gyoo (School of Elecronic and Computer Engineering, Chungbuk National University) ;
- Kim Yeong-Seuk (School of Elecronic and Computer Engineering, Chungbuk National University)
- Published : 2004.08.01
Abstract
High oxidation temperature of SiC shows a tendency of carbide formation at the interface which results in poor MOSFET transfer characteristics. Thus we developed oxidation processes in order to get low interface charge densities. N-type 6H-SiC MOS capacitors were fabricated by different oxidation processes: dry, wet, and dryreoxidation. Gate oxidation and Ar anneal temperature was
Keywords
- SiC;
- MOS capacitor;
- oxidation;
- high-freqency C-V;
- null;
- conductance method;
- gate oxide leakage current densities