Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- summer
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- Pages.209-212
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- 2004
The Trap Characteristics of SILC in Silicon Oxide for SoC
- Kang C. S. (Department of Electronic & Information Engineering, Yuhan College)
- Published : 2004.08.01
Abstract
In this paper, The stress induced leakage currents of thin silicon oxides is investigated in the nano scale structure implementation for Soc. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The channel current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between
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