한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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- Pages.1296-1299
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- 2004
Ru CMP 공정에서의 화학액과 연마 입자 농도에 따른 연마율과 표면 특성
Effects of Chemical and Abrasive Particles for the Removal Rate and Surface Microroughness in Ruthenium CMP
- Lee, Sang-Ho (Metallury and Metarials Engineering, Hanyang University) ;
- Kang, Young-Jea (Metallury and Metarials Engineering, Hanyang University) ;
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Park, Jin-Goo
(Metallury and Metarials Engineering, Hanyang University)
- 발행 : 2004.07.05
초록
MIM capacitor has been investigated for the next generation DRAM. Conventional poly-Si bottom electrode cannot satisfy the requirement of electrical properties and comparability to the high k materials. New bottom electrode material such as ruthenium has been suggested in the fabrication of MIM structure capacitor. However, the ruthenium has to be planarized due to the backend scalability. For the planarization CMP has been widely used in the manufacture of integrated circuit. In this research, ruthenium thin film was Polished by CMP with cerium ammonium nitrate (CAN)base slurry. HNO3 was added on the CAN solution as an additive. In the various concentration of chemical and alumina abrasive, ruthenium surface was etched and polished. After static etching and polishing, etching and removal rate was investigated. Also microroughness of surface was observed by AFM. The etching and removal rate depended on the concentration of CAN, and HNO3 accelerated the etching and polishing of ruthenium. The reasonable removal rate and microroughness of surface was achieved in the 1wt% alumina slurry.