Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2004.11a
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- Pages.671-674
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- 2004
Single Crystal Formation of BSCCO Thin Films by Epitaxy Growth
에피택시 성장으로 제작한 BSCCO 박막의 단결정 형성
- Cheon, Min-Woo (Dongshin Univ.) ;
- Yang, Sung-Ho (Dongshin Univ.) ;
- Park, Yong-Pil (Dongshin Univ.)
- Published : 2004.11.11
Abstract
BSCCO thin films have been fabricated by epitaxy growth at an ultra-low growth rate. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and 820