Bi-CMOS공정중 SSR 채널 형성을 위한 $Sb_2O_3$ 빔튜닝 방법 연구

A Study of $Sb_2O_3$ Beam Tuning for SSR Channel on Bi-CMOS Process

The characteristics of antimony implants are relatively well-known. Antimony has lower diffusion coefficient, shorter implantation range, and smaller scattering as compared with conventional dopants such as phosphorous and arsenic. It has been commonly used in the doping of buried layer in Bi-CMOS process. In this paper, characteristics and appropriate condition of monitoring in antimony implant beam tuning using $Sb_2O_3$ were investigated to get a reliable process. TW(Thema Wave) and Rs(Sheet Resistance) test were carried out to set up condition of monitoring for stable operation through the periodic inspection of instruction condition. The monitoring was progressed at the point that the slant of Rs varied significantly to investigate the variation of instruction accurately.