한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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- Pages.365-368
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- 2004
Multi result MOSFET의 에피층 농도에 따른 전기적 특성분석
Electrical characteristics of the multi-result MOSFET
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김형우
(한국전기연구원 전력반도체연구그룹) ;
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김상철
(한국전기연구원 전력반도체연구그룹) ;
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서길수
(한국전기연구원 전력반도체연구그룹) ;
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김은동
(한국전기연구원 전력반도체연구그룹)
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Kim, Hyoung-Woo
(Korea Electrotechnology Research Institute, Power Semiconductor Group) ;
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Kim, Sang-Cheol
(Korea Electrotechnology Research Institute, Power Semiconductor Group) ;
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S대, Kil-Soo
(Korea Electrotechnology Research Institute, Power Semiconductor Group) ;
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Kim, Eun-Dong
(Korea Electrotechnology Research Institute, Power Semiconductor Group)
- 발행 : 2004.07.05
초록
Charge compensation effects in multi-resurf structure make possible to obtain high breakdown volatage and low on-resistance in vertical MOSFET. In this paper, electrical characteristics of the vertical MOSFET with multi epitaxial layer is presented. Proposed device has n and p-pillar for obtaining the charge compensation effects and The doping concentration each pillar is varied from