한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

In-situ SiN Mask를 이용하여 성장한 GaN 박막의 물성적, 광학적 특성 연구

A Study of Physical and Optical Properties of GaN grown using In-situ SiN Mask by MOCVD

  • 김덕규 (원광대학교 전기전자공학부) ;
  • 정종엽 (원광대학교 전기전자공학부) ;
  • 박춘배 (원광대학교 전기전자공학부)
  • Kim, Deok-Kyu (Wonkwang Uni. Department of Electrical and Electronic Engineering) ;
  • Jeong, Jong-Yub (Wonkwang Uni. Department of Electrical and Electronic Engineering) ;
  • Park, Choon-Bae (Wonkwang Uni. Department of Electrical and Electronic Engineering)
  • 발행 : 2004.07.05
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초록

We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition(MOCVD) and study the physical properties of the GaN layer. We have also investigate the effect of the SiN mask on its optical property. By inserting a SiN mask, (102) the full width at half maximum(FWHM) decreased from 480 arcsec to 409 arcsec. The PL intensity of GaN with SiN mask improved 2 times to that without SiN mask. We have thus shown that the SiN mask improved significantly the physical and optical properties of the GgN layer.

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