• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07a
• /
• pp.121-124
• /
• 2004

We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition(MOCVD) and study the physical properties of the GaN layer. We have also investigate the effect of the SiN mask on its optical property. By inserting a SiN mask, (102) the full width at half maximum(FWHM) decreased from 480 arcsec to 409 arcsec. The PL intensity of GaN with SiN mask improved 2 times to that without SiN mask. We have thus shown that the SiN mask improved significantly the physical and optical properties of the GgN layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.10
• /
• pp.945-949
• /
• 2005

We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition (MOCVD) and study the physical properties of the GaN layer. We have also fabricate PN junction light emitting diode (LED) to investigate the effect of the SiN mask on its optical property By inserting a SiN mask, (102) the full width at half maximum (FWHM) decreased from 480 arcsec to 409 arcsec and threading dislocation (TD) density decreased from $3.21{\times}10^9\;cm^{-2}$ to $9.7{\times}10^8\;cm^{-2}$. The output power of the LED with a SiN mask increased from 198 mcd to 392 mcd at 20 mA. We have thus shown that the SiN mask improved significantly the physical and optical properties of the GaN layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.6
• /
• pp.582-586
• /
• 2005

We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition (MOCVD) and study the physical properties of the GaN layer. We have also investigate the effect of the SiN mask on its optical property. By inserting a SiN mask, (102) the full width at half maximum (FWHM) decreased from 480 arcsec to 409 arcsec and threading dislocation (TD) density decreased from $3.21\times10^9\;cm^{-2}\;to\;9.7\times10^8\;cm^{-2}$. The PL intensity of GaN with SiN mask improved 2 times to that without SiN mask. We have thus shown that the SiN mask improved significantly the physical and optical properties of the GaN layer.

• Journal of the Korean Vacuum Society
• /
• v.11 no.2
• /
• pp.97-102
• /
• 2002

Highly-oriented ZnO thin films has been successfully deposited on Si(100) by metal organic chemical vapor deposition(MOCVD) at $250^{\circ}C$~$400^{\circ}C$ We report on the structural properties of ZnO thin film at various temperatures and at various ratios of the he and $O_2$ gas flow rates. The crystallinity of the thin films was improved and the surface smoothness decreased with the increase of the growth temperature. In x-ray diffraction analysis with respect to ZnO(0002) peak, the full width at half maximum (FWHM) of $0.4^{\circ}$ was achieved at $400^{\circ}C$.

• Journal of the Microelectronics and Packaging Society
• /
• v.21 no.3
• /
• pp.67-71
• /
• 2014

An attempt to grow high quality GaN on silicon substrate using metal organic chemical vapor deposition (MOCVD), herein GaN epitaxial layers were grown on various Si(111) substrates. Thin Platinum layer was deposited on Si(111) substrate using sputtering, followed by thermal annealing to form Pt nano-clusters which act as masking layer during dry-etched with inductively coupled plasma-reactive ion etching to generate nano-patterned Si(111) substrate. In addition, micro-patterned Si(111) substrate with circle shape was also fabricated by using conventional photo-lithography technique. GaN epitaxial layers were subsequently grown on micro-, nano-patterned and conventional Si (111) substrate under identical growth conditions for comparison. The GaN layer grown on nano-patterned Si (111) substrate shows the lowest crack density with mirror-like surface morphology. The FWHM values of XRD rocking curve measured from symmetry (002) and asymmetry (102) planes are 576 arcsec and 828 arcsec, respectively. To corroborate an enhancement of the growth quality, the FWHM value achieved from the photoluminescence spectra also shows the lowest value (46.5 meV) as compare to other grown samples.

• The Korean Journal of Nuclear Medicine Technology
• /
• v.13 no.3
• /
• pp.102-109
• /
• 2009

Purpose: Flash 3D (pixon(R) method; 3D OSEM) was developed as a software program to shorten exam time and improve image quality through reconstruction, it is an image processing method that usefully be applied to nuclear medicine tomography. If perfoming brain diamox perfusion scan by reconstructing subtracted images by Flash 3D with shortened image acquisition time, there was a problem that SNR of subtracted image is lower than basal image. To increase SNR of subtracted image, we use LEAP collimators, and we emphasized on sensitivity of vessel dilatation than resolution of brain vessel. In this study, our purpose is to confirm possibility of application of LEAP collimators at brain diamox perfusion tomography, identify proper reconstruction factors by using Flash 3D. Materials and methods: (1) The evaluation of phantom: We used Hoffman 3D Brain Phantom with $^{99m}Tc$. We obtained images by LEAP and LEHR collimators (diamox image) and after 6 hours (the half life of $^{99m}Tc$: 6 hours), we use obtained second image (basal image) by same method. Also, we acquired SNR and ratio of white matters/gray matters of each basal image and subtracted image. (2) The evaluation of patient's image: We quantitatively analyzed patients who were examined by LEAP collimators then was classified as a normal group and who were examined by LEHR collimators then was classified as a normal group from 2008. 05 to 2009. 01. We evaluate the results from phantom by substituting factors. We used one-day protocol and injected $^{99m}Tc$-ECD 925 MBq at both basal image acquisition and diamox image acquisition. Results: (1) The evaluation of phantom: After measuring counts from each detector, at basal image 41~46 kcount, stress image 79~90 kcount, subtraction image 40~47 kcount were detected. LEAP was about 102~113 kcount at basal image, 188~210 kcount at stress image and 94~103 at subtraction image kcount were detected. The SNR of LEHR subtraction image was decreased than LEHR basal image about 37%, the SNR of LEAP subtraction image was decreased than LEAP basal image about 17%. The ratio of gray matter versus white matter is 2.2:1 at LEHR basal image and 1.9:1 at subtraction, and at LEAP basal image was 2.4:1 and subtraction image was 2:1. (2) The evaluation of patient's image: the counts acquired by LEHR collimators are about 40~60 kcounts at basal image, and 80~100 kcount at stress image. It was proper to set FWHM as 7 mm at basal and stress image and 11mm at subtraction image. LEAP was about 80~100 kcount at basal image and 180~200 kcount at stress image. LEAP images could reduce blurring by setting FWHM as 5 mm at basal and stress images and 7 mm at subtraction image. At basal and stress image, LEHR image was superior than LEAP image. But in case of subtraction image like a phantom experiment, it showed rough image because SNR of LEHR image was decreased. On the other hand, in case of subtraction LEAP image was better than LEHR image in SNR and sensitivity. In all LEHR and LEAP collimator images, proper subset and iteration frequency was 8 times. Conclusions: We could archive more clear and high SNR subtraction image by using proper filter with LEAP collimator. In case of applying one day protocol and reconstructing by Flash 3D, we could consider application of LEAP collimator to acquire better subtraction image.

• Progress in Superconductivity
• /
• v.14 no.2
• /
• pp.102-105
• /
• 2012

We are developing meander-shaped metallic magnetic calorimeters using micro-fabrication methods. A planar Nb coil in a meander shape was fabricated on a Si substrate. The coil was designed to have a persistent current using a metal heater evaporated on a part of the coil. A paramagnetic sensor, $5{\mu}m$ thick Au:Er foil, was glued on top of the meander structure with epoxy. The magnetization and heat capacity were measured at different temperatures, and applied field currents matched well with expected values. The detector showed an energy resolution of 4 keV FWHM for the 5.5 MeV alpha particles.

• Korean Journal of Optics and Photonics
• /
• v.16 no.1
• /
• pp.99-102
• /
• 2005

We fabricated a tunable fiber ring laser consisting of a novel strain device and fiber Bragg gratings. The lasing power and FWHM bandwidth of the optical fiber ring laser was -12dBm and 0.05nm respectively. The fiber ring laser was tuned as much as 10nm at a 8000.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.146-146
• /
• 2011

The blue light emitting diode (LED) structure based on non-polar a-plane (11-20) GaN which was coated TiO2 nanoparticles using spin coating method was grown on r-plane (1-102) sapphire substrates to improve light extraction efficiency. We report on the emission and structural properties with temperature dependence of photoluminescence (PL) and x-ray rocking curves (XRC). From PL results at 13 K of undoped GaN samples, basal plane stacking fault (BSF) and near band edge (NBE) emission peak were observed at 3.434 eV and 3.484 eV, respectively. We also found the temperature-induced band-gap shrinkage, which was fitted well with empirical Varshini's equation. The PL intensity of TiO2 nanoparticles ?coated multiple quantum well (MQW) sample is decayed slower than that of no coating sample with increasing temperature. The anisotrophic strain and azimuth angle dependence in the films were shown from XRC results. The full width at half maximum (FWHM) along the GaN [11-20] and [1-100] directions were 564.9 arcsec and 490.8 arcsec, respectively. A small deviation of FWHM values at in-plane direction is attributed to uniform in-plane strain.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.148-149
• /
• 2012

This paper reports doping of carbon atoms in GaN layer, which based on dimethylhydrazine (DMHy) and growth temperature. It is well known that dislocations can act as non-radiative recombination center in light emitting diode (LED). Recently, many researchers have tried to reduce the dislocation density by using various techniques such as lateral epitaxial overgrowth (LEO) [1] and patterned sapphire substrate (PSS) [2], and etc. However, LEO and PSS techniques require additional complicated steps to make masks or patterns on the substrate. Some reports also showed insertion of carbon doped layer may have good effect on crystal quality of GaN layer [3]. Here we report the growth of GaN epitaxial layer by inserting carbon doped GaN layer into GaN epitaxial layer. GaN:C layer growth was performed in metal-organic chemical vapor deposition (MOCVD) reactor, and DMHy was used as a carbon doping source. We elucidated the role of DMHy in various GaN:C growth temperature. When growth temperature of GaN decreases, the concentration of carbon increases. Hence, we also checked the carbon concentration with DMHy depending on growth temperature. Carbon concentration of conventional GaN is $1.15{\times}1016$. Carbon concentration can be achieved up to $4.68{\times}1,018$. GaN epilayer quality measured by XRD rocking curve get better with GaN:C layer insertion. FWHM of (002) was decreased from 245 arcsec to 234 arcsec and FWHM of (102) decreased from 338 arcsec to 302 arcsec. By comparing the quality of GaN:C layer inserted GaN with conventional GaN, we confirmed that GaN:C interlayer can block dislocations.