한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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- Pages.13-16
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- 2004
40-Gbps급 InGaAs 도파로형 포토다이오드의 신뢰성 실험
Reliability testing of InGaAs Waveguide Photodiodes for 40-Gbps Optical Receiver Applications
- Joo, Han-Sung (Department of Electrical and Electronic Engineering Yonsei University) ;
- Ko, Young-Don (Department of Electrical and Electronic Engineering Yonsei University) ;
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Yun, Il-Gu
(Department of Electrical and Electronic Engineering Yonsei University)
- 발행 : 2004.07.05
초록
The reliability of 1.550m-wavelength InGaAs mesa waveguide photodiodes(WGPDs), which developed for 40-Gbps optical receiver applications, fabricated by metal organic chemical vapor deposition is investigated. Reliability is examined by both high-temperature storage tests and the accelerated life tests by monitoring dark current and breakdown voltage. The median device lifetime and the activation energy of the degradation mechanism are computed for WGPD test structures. From the accelerated life test results, the activation energy of the degradation mechanism and median lifetime of these devices in room temperature are extracted from the log-normal failure model by using average lifetime and the standard deviation of that lifetime in each test temperature. It is found that the WGPD structure yields devices with the median lifetime of much longer than