Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Design of Charge Pump with High Pumping Gain

높은 펌핑 이득을 갖는 저전압 차지 펌프 설계

  • Choi Dong-Kwon (Division of Electrical and Computer Engineering, Hanyang University) ;
  • Shin Yoon-Jae (Division of Electrical and Computer Engineering, Hanyang University) ;
  • Cui Xiang-Hwa (Division of Electrical and Computer Engineering, Hanyang University) ;
  • Kwack Kae-Dal (Division of Electrical and Computer Engineering, Hanyang University)
  • 최동권 (한양대학교 전자통신전파공학과) ;
  • 신윤재 (한양대학교 전자통신전파공학과) ;
  • 최향화 (한양대학교 전자통신전파공학과) ;
  • 곽계달 (한양대학교 전자통신전파공학과)
  • Published : 2004.06.01
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Abstract

AS supply voltage of DRAM is scaled down, voltage circuit that is stable from external noise is more important. $V_{PP}$ voltage is very important, it is biased to gate of memory cell transistor and possible to read and write without voltage down. It has both high pump gain and high power efficiency therefore charge pump circuit is proposed. The circuit is simulated by 0.18${\mu}m$ memory process and 1.2V supply voltage. Compare to CCTS, it is improved 0.43V of pump gain, $3.06\%$ of power efficiency at 6 stage.

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