Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Design and fabrication of Q-band MIMIC oscillator using the MEMS technology

MEMS 기술을 이용한 Q-band MIMIC 발진기의 설계 및 제작

  • Baek Tae-Jong (Millimeter - wave INnovation Technology research center (MINT), Dongguk University) ;
  • Lee Mun-Kyo (Millimeter - wave INnovation Technology research center (MINT), Dongguk University) ;
  • Lim Byeong-Ok (Millimeter - wave INnovation Technology research center (MINT), Dongguk University) ;
  • Kim Sung-Chan (Millimeter - wave INnovation Technology research center (MINT), Dongguk University) ;
  • Lee Bok-Hyung (Millimeter - wave INnovation Technology research center (MINT), Dongguk University) ;
  • An Dan (Millimeter - wave INnovation Technology research center (MINT), Dongguk University) ;
  • Shin Dong-Hoon (Millimeter - wave INnovation Technology research center (MINT), Dongguk University) ;
  • Park Hyung-Moo (Millimeter - wave INnovation Technology research center (MINT), Dongguk University) ;
  • Rhee Jin Koo (Millimeter - wave INnovation Technology research center (MINT), Dongguk University)
  • 백태종 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 이문교 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 임병옥 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 김성찬 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 이복형 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 안단 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 신동훈 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 박형무 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 이진구 (동국대학교 밀리미터파 신기술 연구센터)
  • Published : 2004.06.01
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Abstract

We suggest Q-band MEMS MIMIC (Millimeter wave Monolithic Integrated Circuit) HEMT Oscillator using DAML (Dielectric-supported Airgapped Mcrostrip Line) structure. We elevated the signal lines from the substrate using dielectric post, in order to reduce the substrate dielectric loss and obtain low losses at millimeter-wave frequency. These DAML are composed with heist of $10\;{\mu}m$ and post size with $20\;{\mu}m\;{\times}\;20\;{\mu}m$. The MEMS oscillator was successfully integrated by the process of $0.1\;{\mu}m$ GaAs PHEMTs, CPW transmission line and DAML. The phase noise characteristic of the MEMS oscillator was improved more than 7.5 dBc/Hz at a 1 MHz offset frequency than that of the CPW oscillator And the high output power of 7.5 dBm was measured at 34.4 GHz.

Keywords