대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

가스센서 $SnO_2$ 박막의 광역평탄화 특성

CMP properties of $SnO_2$ thin film

  • 최권우 (조선대학교 전기공학과) ;
  • 이우선 (조선대학교 전기공학과) ;
  • 박정민 (조선대학교 전기공학과) ;
  • 최석조 (조선대학교 전기공학과) ;
  • 박도성 (조선대학교 전기공학과) ;
  • 김남오 (조선이공대학 전기공학과)
  • 발행 : 2004.07.14
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis of used slurry.

키워드