Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2003.07b
- /
- Pages.913-917
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- 2003
Effect of RF Sputtering Conditions on Properties of Thin Film Resistor for Microwave Device
초고주파용 박막저항의 특성에 미치는 RF 스파터링 조건의 영향
- Ryu, Sung-Rok (Hanbat National Univ.) ;
-
Koo, Bon-Keup
(Hanbat National Univ.)
;
- Kang, Beong-Don (KMC Technology) ;
- Ryu, Jei-Chun (KMC Technology) ;
-
Kim, Dong-Jin
(KMC Technology)
- 류승록 (한밭대학교 재료공학과) ;
-
구본급
(한밭대학교 재료공학과)
;
- 강병돈 ((주)케이엠씨 테크놀러지) ;
- 류제천 ((주)케이엠씨 테크놀러지) ;
-
김동진
((주)케이엠씨 테크놀러지)
- Published : 2003.07.10
Abstract
In the electronic components and devices fabrication, thin film resistors with low TCR(temperature coefficient of resistance) and high precision have been used over 3 GHz microwave in recent years. Ni-Cr alloys thin films resistors is one of the most commonly used resistive materials because it has low TCR and highly stable resistance. In this work, we fabricated thin film resistors using Evanohm alloys target(72Ni-20Cr-3Al-4Mn-Si) of s-type with excellent resistors properties by RF-sputtering. Also we reported best deposited conditions of thin film resistors for microwave to observe microstructure and electronic properties of thin film according to deposited conditions(between target and substrate, power supply)
Keywords
- Thin film;
- Microwave;
- Temperature coefficient of resistance;
- Resistors Evanohm alloys target(72Ni-20Cr-3Al-4Mn-Si)