한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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- Pages.834-837
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- 2003
초고온 MEMS용 TiN/3C-SiC의 Ohmic 특성
Ohmic Characteristics of TiN/3C-SiC for High-temperature MEMS Applications
- Jung, Su-Yong (School of Information System Eng. Dongseo Univ.) ;
- Woo, Hyung-Soon (School of Information System Eng. Dongseo Univ.) ;
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Kim, Gue-Hyun
(School of Applied Eng. Dongseo Univ.) ;
- Chung, Gwiy-Sang (School of Information System Eng. Dongseo Univ.)
- 발행 : 2003.07.10
초록
In this study, Ohmic contacts make on 3C-SiC using TiN. Ohmic contact resistivity of TiN/3C-SiC was evaluated. Specific contact resistance was calculated by Circular-TLM(transmission line model) method and physics properties were measured using XRD, SEM, respectively. TiN contact is stable at high temperatures and a good diffusion barrier material. The TiN/3C-SiC contacts are thermally stable to annealing temperatures up to