한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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- Pages.378-381
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- 2003
첨가제에 따른 $SiO_2$ CMP 특성
[ $SiO_2$ ] CMP Characteristic by Additive
- Lee, Woo-Sun (Chosun Univ.) ;
- Ko, Pi-Ju (Chosun Univ.) ;
- Choi, Kwon-Woo (Chosun Univ.) ;
- Shin, Jae-Wook (Chosun Univ.) ;
- Seo, Yong-Jin (Daebul Univ.)
- 발행 : 2003.07.10
초록
The chemical mechanical polishing (CMP) has been widely accepted for the global planarization of multi-layer structures in semiconductor manufacturing However, cost of ownership (COO) and cost of consumables (COC) were relatively increased because of expensive slurry. In this paper, the effects of different slurry composition on the oxide CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity. We prepared the various kinds of slurry. In order to save the costs of slurry, the original slurry was diluted by de-ionized water (DIW). And then, alunima abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry.