Proceedings of the Korean Institute of Information and Commucation Sciences Conference (한국정보통신학회:학술대회논문집)
- 2003.10a
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- Pages.773-776
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- 2003
Analysis of the electrical characteristics for SiGe pMOSFET by the carrier transport models
캐리어 전송 모델에 따른 SiGe pMOSFET의 전기적 특성분석
Abstract
In this paper, we have designed the p-type SiGe MOSFET and analyzed the electrical characteristics. When the gate voltage is biased to -1.5V, the threshold voltage values are -0.97V and -1.15V at room temperature and 77K, respectively. We know that the operating characteristics of SiGe MOSFET is superior to the basic Si MOSFET which the threshold voltage is -1.36V.
본 논문에서는 p형 SiGe pMOSFET를 디자인하고 온도에 따른 전기적 특성들을 분석하였다. 채널 길이는 0.9