Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Design of Broadband FET Switch Using Drain Impedance Transformation Network

드레인 임피던스 변환회로를 이용한 광대역 FET 스위치 설계

  • Choi, Won (Dept. of Electronics Eng, University of Incheon) ;
  • No, Hee-Jung (Dept. of Electronics Eng, University of Incheon) ;
  • Oh, Chung-Kyun (Dept. of Electronics Eng, University of Incheon) ;
  • Koo, Kyung-Heon (Dept. of Electronics Eng, University of Incheon)
  • 최원 (인천대학교 공과대학 전자공학과) ;
  • 노희정 (인천대학교 공과대학 전자공학과) ;
  • 오정균 (인천대학교 공과대학 전자공학과) ;
  • 구경헌 (인천대학교 공과대학 전자공학과)
  • Published : 2003.11.01
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Abstract

This paper describes the design and the simulation of a V-band single pole double throw (SPDT) FET switch fur millimeter-wave applications using drain impedance transformation network with CPW transmission line. The designed switch has about 10% bandwidth at 60GHz. Insertion loss is better than 3dB fur the ON state and Isolation is larger than 30dB fer the OFF state. The maximum isolation is 43.4dB at 60GHz with input power of 10dBm. The yield analysis is done considering the effects of pHEMT variations.

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