Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2003.07b
- /
- Pages.1057-1060
- /
- 2003
The research about the electric characterization in accordance with structural dimension and temperature variation.
고온 영역에서의 SOI EDMOS의 Dimension과 온도 변화에 따른 전기적 특성에 관한 연구
- Park, Jin-Woo (Dept. of Electric engineering, Sogang University) ;
- Im, Dong-Ju ;
-
Gu, Young-Sea
;
-
No, Tae-Moon
;
- An, Chel
- 박진우 (서강 대학교 전자공학과) ;
- 임동주 (서경 대학교 전자공학과) ;
-
구용서
(서경 대학교 전자공학과)
;
-
노태문
(한국전자 통신 연구소)
;
- 안철 (서강 대학교 전자공학과)
- Published : 2003.07.01
Abstract
This paper is about the optimized fabricated parameter in the EDMOSFET(Extended drain MOSFET) with a various temperature. As we know, the two important factors of EDMOSFET parameters are breakdown voltage and on Resistance. So, we have aims of the power EDMOSFET design to have high breakdown voltage and low on resistance. Thus in this paper, we will show the figure of merit in LDMOS (BV/Ron) in accordance with increase in temperature(300K-500K, step:50K), and measure electronic characteristics of power EDMOSFET. As a result, the important factors in design of EDMOS are temperature and Lg.
Keywords