대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

완전 결핍 SOI MOSFET의 계면 트랩 밀도에 대한 급속 열처리 효과

Effect of rapid thermal annealing on interface trap density by using subthreshold slope technique in the FD SOI MOSFETs

  • Jihun Oh (Nano Electronic Devices Team Electronics and Telecommunications Research Institute) ;
  • Cho, Won-ju (Nano Electronic Devices Team Electronics and Telecommunications Research Institute) ;
  • Yang, Jong-Heon (Nano Electronic Devices Team Electronics and Telecommunications Research Institute) ;
  • Kiju Im (Nano Electronic Devices Team Electronics and Telecommunications Research Institute) ;
  • Baek, In-Bok (Nano Electronic Devices Team Electronics and Telecommunications Research Institute) ;
  • Ahn, Chang-Geun (Nano Electronic Devices Team Electronics and Telecommunications Research Institute) ;
  • Lee, Seongjae (Nano Electronic Devices Team Electronics and Telecommunications Research Institute)
  • 발행 : 2003.07.01
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초록

In this presentation, we investigated the abnormal subthreshold slope of the FD SOI MOSFETs upon the rapid thermal annealing. Based on subthreshold technique and C-V measurement, we deduced that the hump of the subthreshold slope comes from the abnormal D$_{it}$ distribution after RTA. The local kink in the interface trap density distribution by RTA drastically degrades the subthreshold characteristics and mini hump can be eliminated by S-PGA.A.

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