사파이어 기판 위에 펄스-증착법으로 성장한 YBCO/CeO2박막의 초전도성과 표면 모폴러지

Superconductivity and Surface Morphology of YBCO/CeO$_2$ Thin Films on Sapphire Substrate by Pulsed Laser Deposition

  • Kang, Kwang-Yong (Semiconductor & Basic Research Institute, ETRI) ;
  • J. D. Suh (Semiconductor & Basic Research Institute, ETRI)
  • 발행 : 2003.02.01

초록

The crystal structure and properties of YBa$_2$Cu$_3$$O_{7-x}$(YBCO) and CeO$_2$ thin films deposited on r-plane (1(equation omitted)02) sapphire substrate by pulsed- laser deposition(PLD) have been investigated. C-axis oriented epitaxial YBCO thin films with critical temperature (Tc) of 88 K were routinely grown on (200) oriented CeO$_2$ buffer layers with thickness in the range between 20 to 80 nm. When the thickness of the (200)oriented CeO$_2$ buffer layer increases over than 80 nm, the superconducting properties of YBCO thin films on that were deteriorated. The decrease in Tc of YBCO thin films was explained by the microcrack formation in CeO$_2$ buffer layer. These results indicate that the thickness of the (200) oriented CeO$_2$ buffer layer is critical to the epitaxial YBCO thin nim growth on r-plane (1(equation omitted)02) sapphire substrate.e.

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