Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2002.05b
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- Pages.74-77
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- 2002
Etching characteristics of Ru thin films with $CF_4/O_2$ gas chemistry
$CF_4/O_2$ gas chemistry에 의한 Ru 박막의 식각 특성
Abstract
Ferroelectric Random Access Memory(FRAM) and MEMS applications require noble metal or refractory metal oxide electrodes. In this study, Ru thin films were etched using