한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Vacuum Dependency of Si, Co Slicide and Mo Silicide FEAs

  • Lee, Jong-Duk (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Shim, Byung-Chang (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Park, Byung-Gook (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Uh, Hyung-Soo (School of Electronics Engineering, Sejong University)
  • Published : 2002.08.21
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Abstract

In this paper, it is reported that the anode current changes at the constantly applied gate voltages and the current-voltage (I-V) characteristics of Si, Co silicide and Mo silicide field emitter arrays (FEAs) depending on vacuum level from a $10^{-9}$ torr to a $10^{-6}$ torr. The mechanism of the robustness of anode current degradation of Mo silicide FEAs under poor vacuum conditions can be explained by the model of tolerance for the oxygen adsorption and oxidation at the silicide surface. Also, we present the changes of emitting area and work function of the emitters according to vacuum level.

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