캐리어 트랩핑 모델 및 질화산화막의 트랩특성에 관한 연구

A Study on the Carrier Trapping Model and Trap Characteristics for Nitridation of Oxide

  • 정양희 (여수대학교 전기공학과)
  • 발행 : 2002.11.01

초록

In this paper, we discuss carrier trapping model and trap characteristics of nitrided oxide thin film. Based on the experimental results, the carrier trapping model for system having multi-traps is proposed and is fitted with experimental data in order to determine trap parameter of nitride oxide and O2 annealed nitrided oxide. As a results of curve fitting, the heavy nitridation of oxide introduces three kinds of traps with capture cross section $\sigma$n1=1.48$\times$10$^{-17}$ $\textrm{cm}^2$, $\sigma$n2=1.51$\times$10$^{-19}$ $\textrm{cm}^2$, $\sigma$p=1.53$\times$10$^{-18}$ $\textrm{cm}^2$ and corresponding trap densities Nnl=2.66$\times$10$^{12}$ Cm$^{-2}$ , Nn2=1.32$\times$10$^{12}$ Cm$^{-2}$ , Np=8.35$\times$10$^{12}$ Cm$^{-2}$ .

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