대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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- Pages.33-36
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- 2002
고주파용 4H-SiC MESFET 제작 및 측정
Fabrication and Measurement of 4H-SiC MESFET for High Friquency Applications
- Kim, Jae-Kwon (Dept. of Electronics Engineering, Sogang University) ;
- Song, Nam-Jin (Dept. of Electronics Engineering, Sogang University) ;
- Kim, Tae-Woon (Dept. of Electronics Engineering, Sogang University) ;
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Burm, Jin-Wook
(Dept. of Electronics Engineering, Sogang University) ;
- An, Chul (Dept. of Electronics Engineering, Sogang University)
- 발행 : 2002.06.01
초록
MESFET was fabricated using 4H-SiC substrates and epitaxy The DC characteristics of 0.5 urn gate length, 400 urn gate width MESFET had
키워드