대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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- Pages.29-32
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- 2002
레이저 유도 원자층 도핑(Ll-ALD)법으로 성장시킨 SiGe 소스/드레인 얕은 접합 형성
Ultra-shallow Junction with Elevated SiCe Source/ Drain fabricated by Laser Induced Atomic Layer Doping
초록
This paper describes a novel structure of NMOSFET with elevated SiGe source/drain region and ultra-shallow source/drain extension(SDE)region. A new ultra-shallow junction formation technology. Which is based on damage-free process for rcplacing of low energy ion implantation, is realized using ultra-high vacuum chemical vapor deposition(UHVCVD) and excimer laser annealing(ELA).
키워드