한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2002년도 하계학술대회 논문집
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- Pages.342-345
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- 2002
우수한 전기적 특성을 갖는 p+ 다이버터를 갖는 LTEIGBT의 제작에 관한 연구
Study on Fabrication of The Lateral Trench Electrode IGBT with a p+ Diverter having Excellent Electrical Characteristics
초록
A new lateral trench electrode IGBT with p+ diverter was Proposed to suppress latch-up of LTIGBT. The p+ diverter was placed between the anode and cathode electrode. The latch-up of LTEIGBT with a p+ diverter was effectively suppressed to sustain an anode voltage of 8.7V and a current density of 1453A/