Reactive ion etching of GaAs, AIGaAs, and InGaP in $Cl_2$ and $CCl_2F_2$ plasmas with Ar and $H_2$ addition

  • Yu, Jae-Su (Department of Information & Communications, Kwanju Institute of Science & Technology) ;
  • Bae, Seong-Ju (Department of Information & Communications, Kwanju Institute of Science & Technology) ;
  • Song, Jin-Dong (Department of Information & Communications, Kwanju Institute of Science & Technology) ;
  • Kang, Young-Shik (Department of Information & Communications, Kwanju Institute of Science & Technology) ;
  • Lee, Yong-Tak (Department of Information & Communications, Kwanju Institute of Science & Technology)
  • Published : 2001.07.05