한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2001년도 하계학술대회 논문집
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- Pages.243-246
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- 2001
고전압 사이리스터 제작을 위한 Computer Simulation
Computer Simulation for High Voltage Thyristor Fabrication
- 발행 : 2001.07.01
초록
Thyristor devices have 3-dimensional complicated structure and were sensitive to temperature characteristics. Therefore, it was difficult to optimize thyristor devices design. We have to consider many design parameter to characterize, and trade-off relations. The important parameters to design thyristor devices are cathode structure, effective line width, cathode-emitter shunt structure, gate structure, doping profile and carrier lifetime. So, we must consider that these design parameters were not acted separately. However, there are many difficulties to determine optimized design parameters by experiment. So, We used specific design software to design thyristor devices, and estimated the thyristor devices characteristics.