Computer Simulation for High Voltage Thyristor Fabrication

고전압 사이리스터 제작을 위한 Computer Simulation

Thyristor devices have 3-dimensional complicated structure and were sensitive to temperature characteristics. Therefore, it was difficult to optimize thyristor devices design. We have to consider many design parameter to characterize, and trade-off relations. The important parameters to design thyristor devices are cathode structure, effective line width, cathode-emitter shunt structure, gate structure, doping profile and carrier lifetime. So, we must consider that these design parameters were not acted separately. However, there are many difficulties to determine optimized design parameters by experiment. So, We used specific design software to design thyristor devices, and estimated the thyristor devices characteristics.