Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2001.07a
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- Pages.127-130
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- 2001
Effect of Annealing Temperature on the Luminescence of Si Nanocrystallites Thin Flms Fabricated by Pulsed Laser Deposilion
펄스 레이저 증착법을 이용한 실리콘 박막의 어닐링 온도 변화에 따른 발광 특성연구
Abstract
Si thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was 1 Torr. After deposition, Si thin film has been annealed again at 400-840
Keywords
- Silicon Nanocrystal;
- Annealing;
- Optoelectronic device;
- Quantum confinement elect;
- pulsed laser deposition