Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2001.07a
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- Pages.45-49
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- 2001
Structural and electrical characterizations of $HfO_{2}/HfSi_{x}O_{y}$ as alternative gate dielectrics in MOS devices
MOS 소자의 대체 게이트 산화막으로써 $HfO_{2}/HfSi_{x}O_{y}$ 의 구조 및 전기적 특성 분석
Abstract
We have investigated physical and electrical properties of the Hf
Keywords
- Hf $O_2$/HfS $i_{}$ x// $O_{}$ y/;
- alternative gate dielectrics;
- dielectric constant;
- $D_{}$ itm/;
- leakage current