Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Solid Phase Crystallization of LPCVD Amorphous Silicon Thin Films by Alternating Magnetic Flux

교번자속인가에 의한 비정질 실리콘 박막의 결정화거동에 대한 연구

  • 송아론 (홍익대학교 금속재료공학과) ;
  • 박상진 (홍익대학교 금속재료공학과) ;
  • 박성계 (홍익대학교 금속재료공학과) ;
  • 남승의 (홍익대학교 금속재료공학과) ;
  • 김형준 (홍익대학교 금속재료공학과)
  • Published : 2000.11.01
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Abstract

A new method for the fabrication of poly-Si films is reported using by alternating magnetic flux crystallization (AMFC) of LPCVD a-Si films. In this work we have studied the crystallization of LPCVD a-Si films by alternating magnetic flux. A-Si films were 1200$\AA$-thick deposited at 48$0^{\circ}C$ at a total pressure of 0.25Torr using Si$_2$H$_{6}$/H$_2$. After this step, these a-Si films were thermally annealed by Alternating Magnetic Flux at 43$0^{\circ}C$ for 1hours. The annealed films were characterized using X-ray diffraction (XRD), Raman Spectra, Atomic Force Microscopy(AFM). Both alternating magnetic flux crystallization and solid phase crystallization were investigated to compare enhanced crystallization a-Si. We have found that the low temperature crystallization method at 43$0^{\circ}C$ by alternating magnetic flux.x.

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