Electrical Properties of (PbS)$_{1-x}-(CuS)_{x}$ Thin Films by Chemical Bath Deposition

CBD 방법에 의한 (PbS)$_{1-x}-(CuS)_{x}$ 박막의 전기적 특성

  • 조종래 (부경대학교 공과대학교 전자공학과) ;
  • 조정호 (부경대학교 공과대학교 전자공학과) ;
  • 김강언 (부경대학교 공과대학교 전자공학과) ;
  • 정수태 (부경대학교 공과대학교 전자공학과) ;
  • 조상희 (경북대학교 무기재료공학과)
  • Published : 2000.11.01

Abstract

(PbS)$_{1-x}$ -(CuS)$_{x}$ thin films(x=0, 0.5, 1) were grown on glass substrates by using a chemical bath deposition method. The molecular ratio of Pb to Cu for the PbS-CuS thin films(x=0.5) was measured about 7:3 by using EDX and XRF. The resistivity of non-annealed (PbS)$_{1-x}$ -(CuS)$_{x}$ thin films was about 10 $\Omega$ . cm. However, after annealing, the resistivity of PbS showed a little change, while PbS-CuS and CuS significantly decreased in the range of 0.002 to 0.005$\Omega$.cm. PbS was p-type and CuS was n-type.-type.

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