Parameter Extraction of HEMT Small-Signal Equivalent Circuits Using Multi-Bias Extraction Technique

다중 바이어스 추출 기법을 이용한 HEMT 소신호 파라미터 추출

Multi-bias parameter extraction technique for HEMT small signa] equivalent circuits is presented in this paper. The technique in this paper uses S-parameters measured at various bias points in the active region to construct one optimization problem, of which the vector of unknowns contains only a set of bias-independent elements. Tests are peformed on measured S-parameters of a pHEMT at 30 bias points. Results indicate that the calculated S-parameters is similar to the measured data.