Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2000.07a
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- Pages.403-405
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- 2000
A Single Transistor Type Ferroelectric Field-Effect-Transistor Cell Scheme
- Yang, Yil-Suk (Micro-Electronics Technology Lab., ETRI) ;
- You, In-Kyu (Micro-Electronics Technology Lab., ETRI) ;
- Lee, Wong-Jae (Micro-Electronics Technology Lab., ETRI) ;
- Yu, Byoung-Gon (Micro-Electronics Technology Lab., ETRI) ;
- Cho, Kyong-Ik (Micro-Electronics Technology Lab., ETRI)
- Published : 2000.07.01
Abstract
This paper describes a single transistor type ferroelectric field effect transistor (1Tr FeFET) memory cell scheme, which select one unit memory cell and program/read it. The well voltage can be controlled by isolating the common row well lines. Through applying bias voltage to Gate and Well, respectively, we implement If FeFET memory cell scheme in which interference problem is not generated and the selection of each memory cell is possible. The results of HSPICE simulations showed the successful operations of the proposed cell scheme.
Keywords