대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

논리 회로 구현을 위한 neuron-MOSFET 특성

Characteristics of Neuron-MOSFET for the implementation of logic circuits

  • 발행 : 1999.06.01
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

This paper presents characteristics of neuron-MOSFET for the implementation of logic circuits such at the inverter and D/A converter. Neuron-MOSFETS were fabricated using double poly CMOS process. From the measured results, it was found that noise margin of the inverter was dependant on the coupling ratio and a complete D/A characteristics of the source follower could be obtained by using any input Sate as a control gate.

키워드