Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 1999.06a
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- Pages.239-242
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- 1999
A Study on the Design of the New Structural SOI Smart Power Device with High Switching Speed and Voltage Characteristics
새로운 구조의 고속-고내압 SOI Smart Power 소자 설계에 관한 연구
- Won, Myoung-Kyu (Dept. of Electronic Eng., Sogang Univ.) ;
- Koo, Yong-Seo (Dept. of Electronic Eng. Seokyeong Univ.) ;
- An, Chul (Dept. of Electronic Eng., Sogang Univ.)
- Published : 1999.06.01
Abstract
In this paper, we report the process/device design of high-speed, high-voltage SOI smart power IC for mobile communication system, high-speed HDD system and the electronic control system of automobiles. The high voltage LDMOS with 70V breakdown voltage under 0.8
Keywords