Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1999.05a
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- Pages.501-504
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- 1999
A Study of Chemical Mechanical Polishing on Shallow Trench Isolation to Reduce Defect
CMP 연마를 통한 STI에서 결함 감소
Abstract
In the shallow trench isolation(STI) chemical mechanical polishing(CMP) process, the key issues are the optimized thickness control within- wafer-non-uniformity, and the possible defects such as nitride residue and pad oxide damage. These defects after STI CMP process were discussed to accomplish its optimum process condition. To understand its optimum process condition, overall STI related processes including reverse moat etch, trench etch, STI filling and STI CMP were discussed. It is represented that the nitride residue can be occurred in the condition of high post CMP thickness and low trench depth. In addition there are remaining oxide on the moat surface after reverse moat etch. It means that reverse moat etching process can be the main source of nitride residue. Pad oxide damage can be caused by over-polishing and high trench depth.
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