Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1999.05a
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- Pages.477-480
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- 1999
The characteristics of GaP oxide films by $H_2O_2$ solution
$H_2O_2$ 용액에 의한 GaP 산화막의 특성
Abstract
III-V족 화합물 반도체인 p-CaP의 자연산화막윽 30%
Keywords